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ddr4 thermal sensor issues
#1
Hi, I have this ram but it does not read the temperature, of course it has a sensor, does it have a solution?
Thank you.


Module Manufacturer:                                                            Galaxy Microsystems
Module Size:                                                                    8 GBytes


Memory Speed:                                                                   1801.8 MHz (DDR4-3603 / PC4-28800)

Module Temperature Sensor (TSOD):                                               Supported

Temperature Sensor Location:                                                    Front Side
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#2
Please attach the HWiNFO Debug File with sensor data for analysis.
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#3
Row: 2 - 8 GB PC4-28800 DDR4 SDRAM Galaxy Microsystems -------------------

[General Module Information]
Module Number: 2
Module Size: 8 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1801.8 MHz (DDR4-3603 / PC4-28800)
Module Manufacturer: Galaxy Microsystems
Module Part Number:
Module Revision: 0.0
Module Serial Number: 0
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: Samsung
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 14, 15, 16
Minimum CAS# Latency Time (tAAmin): 14.061 ns
Minimum RAS# to CAS# Delay (tRCDmin): 14.061 ns
Minimum Row Precharge Time (tRPmin): 14.061 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.1 MHz: 15-15-15-36
Supported Module Timing at 1000.0 MHz: 15-15-15-33
Supported Module Timing at 933.3 MHz: 14-14-14-31
Minimum Active to Active/Refresh Time (tRCmin): 47.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns
[Features]
Module Temperature Sensor (TSOD): Supported
Temperature Sensor Location: Front Side
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.555 ns
CAS# Latencies Supported: 17
Minimum CAS# Latency Time (tAAmin): 9.375 ns
Minimum RAS# to CAS# Delay (tRCDmin): 9.750 ns
Minimum Row Precharge Time (tRPmin): 9.750 ns
Minimum Active to Precharge Time (tRASmin): 21.000 ns
Supported Module Timing at 1800.0 MHz: 17-18-18-38
Supported Module Timing at 1733.1 MHz: 17-17-17-37
Minimum Active to Active/Refresh Time (tRCmin): 34.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 23.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.049 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 8.150 ns

Row: 3 - 8 GB PC4-28800 DDR4 SDRAM Galaxy Microsystems -------------------

[General Module Information]
Module Number: 3
Module Size: 8 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1801.8 MHz (DDR4-3603 / PC4-28800)
Module Manufacturer: Galaxy Microsystems
Module Part Number:
Module Revision: 0.0
Module Serial Number: 0
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: Samsung
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 14, 15, 16
Minimum CAS# Latency Time (tAAmin): 14.061 ns
Minimum RAS# to CAS# Delay (tRCDmin): 14.061 ns
Minimum Row Precharge Time (tRPmin): 14.061 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.1 MHz: 15-15-15-36
Supported Module Timing at 1000.0 MHz: 15-15-15-33
Supported Module Timing at 933.3 MHz: 14-14-14-31
Minimum Active to Active/Refresh Time (tRCmin): 47.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns
[Features]
Module Temperature Sensor (TSOD): Supported
Temperature Sensor Location: Front Side
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.555 ns
CAS# Latencies Supported: 17
Minimum CAS# Latency Time (tAAmin): 9.375 ns
Minimum RAS# to CAS# Delay (tRCDmin): 9.750 ns
Minimum Row Precharge Time (tRPmin): 9.750 ns
Minimum Active to Precharge Time (tRASmin): 21.000 ns
Supported Module Timing at 1800.0 MHz: 17-18-18-38
Supported Module Timing at 1733.1 MHz: 17-17-17-37
Minimum Active to Active/Refresh Time (tRCmin): 34.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 23.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.049 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 8.150 ns
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#4
I'm sorry, but that's not the Debug File. Please see here how to create it: https://www.hwinfo.com/forum/Thread-IMPO...g-a-report
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